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HAT2175H
Silicon N Channel Power MOS FET Power Switching
REJ03G0006-0400 Rev.4.00 Sep 20, 2005
Features
* * * * Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 33 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123
3 12
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 15 60 15 15 22.5 15 8.34 150 -55 to +150 Unit V V A A A A mJ W C/W C C
Rev.4.00 Sep 20, 2005 page 1 of 7
HAT2175H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 20 -- -- 4.0 -- -- 15 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 33 34 25 1445 185 61 0.55 21 8 4.5 17 8.2 28 4.7 0.84 45 Max -- -- 10 1 6.0 42 46 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 20mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 8 V Note4 ID = 7.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 50 V, VGS = 10 V, ID = 15 A VGS = 10 V, ID = 7.5 A, VDD 30 V, RL = 4 , Rg = 4.7 IF = 15 A, VGS = 0 Note4 IF = 15 A, VGS = 0, diF/ dt = 100 A/ s
Rev.4.00 Sep 20, 2005 page 2 of 7
HAT2175H
Main Characteristics
Power vs. Temperature Derating
40 500 100
10
PW 1 ms = DC 1 Op 0 m s er at ion
Maximum Safe Operation Area
Pch (W)
ID (A)
30
0
10
s
s
Channel Dissipation
10
20
Drain Current
1
10
Operation in this area is 0.1 limited by RDS(on) 0.01 0.1 0.3 Tc = 25C 1 shot Pulse 1 3 10 30 100 500
0
50
100
150
200
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 10 V 8V 6.4 V Pulse Test 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
12
ID (A) Drain Current
16
6.2 V
16
Drain Current
6.0 V
12 25C Tc = 75C 4 -25C
8
5.8 V 5.6 V VGS = 5.4 V 2 4 6 8 10
8
4
0
0
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500 Pulse Test 400
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
1000 Pulse Test 500
Drain to Source Voltage VDS(on) (mV)
ID = 10 A
300
200 100 50 VGS = 8 V 10 V
200 5A 100 2A
20 10 1 3 10
0
4
8
12
16
20
30
100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.4.00 Sep 20, 2005 page 3 of 7
HAT2175H
Static Drain to Source on State Resistance vs. Temperature
100 Pulse Test 80
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 30 10 25C 3 1 0.3 0.1 0.1
ID = 10 A
2 A, 5A
Tc = -25C 75C
60 2 A, 5 A 40 VGS = 8 V 20 0 -25
ID = 10 A
10 V
VDS = 10 V Pulse Test 0.3 1 3 10 30 100
0
25
50
75
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000 Ciss 1000 300 Coss 100 Crss 30 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100
50
20 di/dt = 100 A/s VGS = 0, Ta = 25C 10 0.1 0.3 1 3 10 30 100
Reverse Drain Current
IDR (A)
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 15 A
VDD = 100 V 50 V 25 V VDS 100 8 VGS 16
Switching Characteristics
VGS (V)
20 100 td(off) 30 td(on) 10 tf 3 tr VGS = 10 V, VDS = 30 V Rg = 4.7 , duty 1 % 0.3 1 3 10 30 100
250
200
Drain to Source Voltage
150
12
50
VDD = 100 V 50 V 25 V 8 16 24 32
4 0 40
Gate to Source Voltage
Switching Time t (ns)
0
1 0.1
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.4.00 Sep 20, 2005 page 4 of 7
HAT2175H
Reverse Drain Current vs. Source to Drain Voltage
20
(mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
25 IAP = 15 A VDD = 50 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
16
10 V
Repetitive Avalanche Energy EAR
20
12 VGS = 0 8 5V 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
15
10
5 0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 8.34C/ W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02 1 0.0
1s
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D. U. T
ID
Vin 15 V 50 0 VDD
Rev.4.00 Sep 20, 2005 page 5 of 7
HAT2175H
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 30 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor
Switching Time Waveform
90%
Rev.4.00 Sep 20, 2005 page 6 of 7
HAT2175H
Package Dimensions
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Package Name LFPAK
MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT2175H-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 20, 2005 page 7 of 7
4.2
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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